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              Wafer

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              Wafers are pieces of circular silicon chips made from pure silicon wafers (99.9999%) .

              As the shapes are round, they are known as wafers.

              NEXTECK provides two kinds of wafers : silicon wafers for semiconductors and silicon wafers for solar batteries.

              Semiconductor wafers are measured from four to six inches. The specifications are as follows:

              Items General Specification of Semiconductor Wafer
              4 inch5 inch6 inch
              Resistivity(Ω/cm) P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P-
              N-Type doped: As, Phos, Sb, 0.001-1, 1-150
              Diameter tolerance
              (mm)
              ±0.2±0.2±0.2
              Orientation (100), (111)(100), (110), (111)(100), (110), (111)
              Orientation tolerance      ±0.15°±0.15°±0.15°
              Edge ProfileT/RT/RT/R
              Edge Condition11/22 Ground11/22 Ground11/22 Ground/Polished
              Thickness(μm)300-650400-650550-750
              Thickness tolerance
              (μm)
              ±15±15±15
              Backside TreatmentEtchPolySiO2EtchPolySiO2EtchPolySiO2
              Bow(μm)±25±25(Before CVD)±25±25(Before CVD)±25±25(Before CVD)
              Warp(μm)≦25≦25(Before CVD)≦25≦25(Before CVD)≦25≦25(Before CVD)
              Options Laser marking, Poly-back, SiO2 seal, Back side damage




              NEXTECK provides monocrystalline silicons and polysilicons in solar energy level. Customized specifications are also supplied. 

              Below is some specifications of our 156mm Mono and Multi silicon wafers for your reference.

              Category Mono silicon waferMulti wafer
              156*156mm(Mono wafer)156*156mm(Multi wafer)
              Growing methodCZ
              Type PP
              DopantBoronBoron
              Crystal Orientation<100>+/-3 deg
              Carbon content
              (atom/cm3)
              <5*1016<5*1017
              Oxygen content
              (atom/cm3)
              <1.1*1018<1*1018
              Etch Pit Defect
              (/cm3)
              <=3000
              Resistivity0.5~3/3~60.5~3
              Minority Carrier Lifetime
              (microsecond (μs) )
              >10>=2
              Dimension (mm)156+/-0.5156+/-0.5
              Thickness (μm)200+/-20200+/-20
              TTV (μm)<=30<=30
              Bow/Warp (μm) <100<50 / <100
              Edge (Chip)Depth≤0.5mmDepth≤0.5mm
              Vertical≤1.0mmVertical≤3.0mm
              Defect≤2Defect≤2

               


              Each items of NEXTECK win years of accumulation and trust. Products used for semiconductors and electronic parts are very completed and with varied shaping methods,excellent forming property and size precision.



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              Providing real-time and high quality service

              NEXTECK (CHINA) - SHENZHEN
              Tower A1001, Galaxy Century, No 3069, CaiTian Rd, Futian District, Shenzhen, China
              Zip Code: 518026
              Tel: +86-755-8256-1631
              Fax:+86-755-8256-1691
              E-mail:nexteck@nexteck.com

              PRODUCTION PLANT
              Wenchuan Rd, Alley 5300/1, Baoshan District, Shanghai, China
              Zip Code: 200942
              Tel: +86-21-3638-0189
              Fax: +86-21-3638-0109
              E-mail: nexteck@nexteck.com.cn

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